Control of dislocations in GaAs grown on Si(211) by molecular beam epitaxy

Technical Report · Sat Aug 01 00:00:00 EDT 1987

OSTI ID:7192185

Ahearn, J S; Uppal, P; Liu, T K; Kroemer, H

The dislocation arrangements in gallium arsenide films grown on silicon substrates with (211) surface orientations were directly determined using transmissions-electron microscopy in planar and cross-sectional views. The dislocations consisted of high-density networks at the GaAs-Si interface and arrays of linear dislocations that propagated from the interface to the surfacer of the film on the (111) planes. Burger's-vector determination of the arrays indicated that dislocations are introduced into the film primarily by a glide and that the linear arrays are a remnant of the interface network. When strained-layer InxGaS(1-x)As/GaAs superlattices were used, the linear arrays were observed to form a closed dislocation network, with the top of the loop structure coincident with the top of the superlattice. The dislocation density was markedly reduced above the superlattice. Results indicate that careful control of the strain can be an effective means of altering dislocation distributions in the films.

• Research Organization: California Univ., Santa Barbara (USA)
• OSTI ID: 7192185
• Report Number(s): AD-A-193550/1/XAB; DAAG-29-85-K-0107
• Resource Relation: Other Information: Pub. in Jnl. of Vacuum Science and Technology, Vol. B5, No. 4, 1156-1161(Jul-Aug 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
DISLOCATIONS
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
BURGERS VECTOR
CONTROL
CROSS SECTIONS
CRYSTAL LATTICES
DENSITY
DISTRIBUTION
INTERFACES
SURFACES
THIN FILMS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
EPITAXY
FILMS
GALLIUM COMPOUNDS
LINE DEFECTS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies