Radiation effect on GaAs interface. Final report, Feb 1974--Aug 1975. [Neutron radiation]
Technical Report
·
OSTI ID:7188026
The C-V and Q-V technique was applied to the study of interface charge distributions of GaAs epitaxial layers grown on semi-insulating substrates. Changes of mobility and free carrier concentration in the epitaxial layer and extending through the interface into the substrate were determined before and after exposure to a neutron fluence of 2.7 x 10 to the 15th power n/sq cm and a total dose of ionizing radiation of 10 to the 8th power rad (GaAs). Changes at the interface and in the epitaxial layer are correlated with the voltage-current characteristic variations of the GaAs junction field-effect transistors. (GRA)
- Research Organization:
- McDonnell Douglas Astronautics Co., Huntington Beach, CA (USA)
- OSTI ID:
- 7188026
- Report Number(s):
- AD-A-015767
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600 -- Radiation Chemistry
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGE CARRIERS
ELECTRON MOBILITY
EPITAXY
FIELD EFFECT TRANSISTORS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MOBILITY
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PARTICLE MOBILITY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
360605* -- Materials-- Radiation Effects
38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEAR CHEMISTRY
400600 -- Radiation Chemistry
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGE CARRIERS
ELECTRON MOBILITY
EPITAXY
FIELD EFFECT TRANSISTORS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MOBILITY
NEUTRON BEAMS
NUCLEON BEAMS
PARTICLE BEAMS
PARTICLE MOBILITY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS