Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

Technical Report · Thu Oct 01 04:00:00 EDT 1992

DOI:https://doi.org/10.2172/7186670· OSTI ID:7186670

Itoh, K

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7186670
• Report Number(s): LBL-33028; ON: DE93004697; CNN: ADT-8809616
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360100 -- Metals & Alloys
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400202* -- Isotope Effects
Isotope Exchange
& Isotope Separation
CRYSTAL GROWTH
CRYSTALS
EVEN-EVEN NUCLEI
GERMANIUM 70
GERMANIUM 74
GERMANIUM ISOTOPES
IMPURITIES
INTERMEDIATE MASS NUCLEI
ISOTOPE SEPARATION
ISOTOPES
MONOCRYSTALS
NUCLEI
SEPARATION PROCESSES
STABLE ISOTOPES