Dielectronic recombination between hyperfine levels of the ground state of Bi sup 82+

Journal Article · Mon Jun 01 00:00:00 EDT 1992 · Physical Review A. General Physics; (United States)

DOI:https://doi.org/10.1103/PhysRevA.45.R7659· OSTI ID:7183098

Pindzola, M S; Badnell, N R ^[1]; Griffin, D C ^[2]

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1. Department of Physics, Auburn University, Auburn, Alabama 36849 (United States)
2. Department of Physics, Rollins College, Winter Park, Florida 32789 (United States)

Dielectronic recombination cross sections between the hyperfine levels of the ground state of Bi{sup 82+} are calculated in a hydrogenic approximation. The radiative decay rates from the doubly excited resonances 1{ital s}({ital F}=5){ital nl} are found to be orders of magnitude stronger than the autoionizing decay rates to the 1{ital s}({ital F}=4) continuum. The associated dielectronic recombination cross sections are strongly peaked towards zero energy, but their overall magnitudes are extremely small compared to the radiative recombination background.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7183098
• Journal Information: Physical Review A. General Physics; (United States), Journal Name: Physical Review A. General Physics; (United States) Vol. 45:11; ISSN 1050-2947; ISSN PLRAA
• Country of Publication: United States
• Language: English

Related Subjects

664300* -- Atomic & Molecular Physics-- Collision Phenomena-- (1992-)
74 ATOMIC AND MOLECULAR PHYSICS
BISMUTH IONS
CHARGE STATE
CHARGED PARTICLES
COLLISIONS
CROSS SECTIONS
DECAY
ELECTRON COLLISIONS
ELECTRON-ION COLLISIONS
HYPERFINE STRUCTURE
ION COLLISIONS
IONS
MULTICHARGED IONS
PARTICLE DECAY
RADIATIVE DECAY
RECOMBINATION