Determination of the strain field from an HREM image of a Si Lomer dislocation. [High-resolution electron microscopy (HREM)]
Conference
·
OSTI ID:7181326
- Brown Univ., Providence, RI (United States). Div. of Engineering
- Lawrence Berkeley Lab., CA (United States)
A new approach to quantitative deformation characterization of high-resolution electron microscopy (HREM) defect images has been developed. The principle of this technique, (Computational Fourier Transform Deformation (CFTD)) is to extract an accurate displacement field about a defect from its HREM image using Fourier transformation procedures. The methodology's unique feature is to digitize the defect image and compute the Moire pattern, from which the displacement field is obtained, without the need for an external reference lattice image, normally associated with the interference phenomena. From this data, the displacement gradient can be calculated, which yields much information on the experimental deformation mechanics. One question that has arisen is whether different imaging conditions of the same defect affects the results of the CFM analysis. We have studied this problem by analyzing the strain components of simulated images of a Lomer dislocation in Si and present our findings here.
- Research Organization:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Organization:
- DOE; DOD; NSF; USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7181326
- Report Number(s):
- LBL-32129; CONF-920819--23; ON: DE92041176; CNN: N00014-90-J-1295; DMR-9002994
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101* -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEFORMATION
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
FOURIER TRANSFORMATION
IMAGE PROCESSING
IMAGES
INTEGRAL TRANSFORMATIONS
LINE DEFECTS
MICROSCOPY
PROCESSING
SEMIMETALS
SILICON
SIMULATION
STRAINS
TRANSFORMATIONS
360602 -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400101* -- Activation
Nuclear Reaction
Radiometric & Radiochemical Procedures
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEFORMATION
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
FOURIER TRANSFORMATION
IMAGE PROCESSING
IMAGES
INTEGRAL TRANSFORMATIONS
LINE DEFECTS
MICROSCOPY
PROCESSING
SEMIMETALS
SILICON
SIMULATION
STRAINS
TRANSFORMATIONS