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U.S. Department of Energy
Office of Scientific and Technical Information

Process for the deposition of high temperature stress and oxidation resistant coatings on silicon-based substrates

Patent ·
OSTI ID:7175095

A process is disclosed for depositing a high temperature stress and oxidation resistant coating on a silicon nitride- or silicon carbide-based substrate body. A gas mixture is passed over the substrate at about 900--1500 C and about 1 torr to about ambient pressure. The gas mixture includes one or more halide vapors with other suitable reactant gases. The partial pressure ratios, flow rates, and process times are sufficient to deposit a continuous, fully dense, adherent coating. The halide and other reactant gases are gradually varied during deposition so that the coating is a graded coating of at least two layers. Each layer is a graded layer changing in composition from the material over which it is deposited to the material of the layer and further to the material, if any, deposited thereon, so that no clearly defined compositional interfaces exist. The gases and their partial pressures are varied according to a predetermined time schedule and the halide and other reactant gases are selected so that the layers include (a) an adherent, continuous intermediate layer about 0.5-20 microns thick of an aluminum nitride or an aluminum oxynitride material, over and chemically bonded to the substrate body, and (b) an adherent, continuous first outer layer about 0.5-900 microns thick including an oxide of aluminum or zirconium over and chemically bonded to the intermediate layer.

DOE Contract Number:
AC05-84OR21400
Assignee:
GTE Laboratories Incorporated, Waltham, MA (United States)
Patent Number(s):
US 5035923; A
Application Number:
PPN: US 7-526365
OSTI ID:
7175095
Country of Publication:
United States
Language:
English