Magnetron sputtering source

Patent · 02 August 1994

OSTI ID:7167745

Makowiecki, D M; McKernan, M A; Grabner, R F; Ramsey, P B

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

• DOE Contract Number: W-7405-ENG-48
• Assignee: Univ. of California, Oakland, CA (United States)
• Patent Number(s): A; US 5333726
• Application Number: PPN: US 8-005122
• OSTI ID: 7167745
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
360201 -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360601 -- Other Materials-- Preparation & Manufacture
CATHODE SPUTTERING
DEPOSITION
DESIGN
ELECTRICAL EQUIPMENT
ELECTRICAL INSULATORS
ELECTRON TUBES
ELECTRONIC EQUIPMENT
EQUIPMENT
MAGNETRONS
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
PHYSICAL VAPOR DEPOSITION
SPUTTERING
SURFACE COATING
TARGETS