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Title: Magnetron sputtering source

Patent ·
OSTI ID:7167745

A magnetron sputtering source for sputtering coating substrates includes a high thermal conductivity electrically insulating ceramic and magnetically attached sputter target which can eliminate vacuum sealing and direct fluid cooling of the cathode assembly. The magnetron sputtering source design results in greater compactness, improved operating characteristics, greater versatility, and low fabrication cost. The design easily retrofits most sputtering apparatuses and provides for safe, easy, and cost effective target replacement, installation, and removal. 12 figs.

DOE Contract Number:
W-7405-ENG-48
Assignee:
Univ. of California, Oakland, CA (United States)
Patent Number(s):
US 5333726; A
Application Number:
PPN: US 8-005122
OSTI ID:
7167745
Resource Relation:
Patent File Date: 15 Jan 1993
Country of Publication:
United States
Language:
English