Epitaxial InAs-coupled superconducting junctions

Journal Article · Fri Dec 15 00:00:00 EST 1989 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.343594· OSTI ID:7166666

Akazaki, T; Kawakami, T; Nitta, J ^[1]

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1. Electrical Communications Laboratories, Nippon Telegraph and Telephone Corporation, 3-9-11 Musashino-shi, Tokyo 180, Japan (JP)

Homoepitaxial {ital n}-type InAs-coupled superconducting junctions are investigated. The {ital n}-type channel layer on a {ital p}-type substrate has nearly the same mobility as bulk crystal and the layer can be isolated electrically from the substrate by the built-in potential at the {ital p}-{ital n} interface. As a result, the critical current-normal resistance ({ital I}{sub {ital C}}{ital R}{sub {ital N}}) product of the homoepitaxial {ital n}-type InAs-coupled junction is at least 30 times better than those of the bulk {ital n}-type ones. The coherence length {xi}{sub {ital N}} is calculated using the experimentally obtained carrier concentration, mobility, and effective mass. Temperature dependence of {ital I}{sub {ital C}} agrees with calculations based on the proximity effect theory which can be applied to the intermediate regime between the clean and dirty limits.

• OSTI ID: 7166666
• Journal Information: Journal of Applied Physics; (USA), Vol. 66:12; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
SUPERCONDUCTING JUNCTIONS
CRITICAL CURRENT
COHERENCE LENGTH
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
N-TYPE CONDUCTORS
PROXIMITY EFFECT
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DIMENSIONS
ELECTRIC CURRENTS
EPITAXY
INDIUM COMPOUNDS
JUNCTIONS
LENGTH
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
426001* - Engineering- Superconducting Devices & Circuits- (1990-)