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Title: High-temperature gaseous corrosion of Si[sub 3]N[sub 4] in H[sub 2]-H[sub 2]O and Ar-O[sub 2] environments

Journal Article · · Journal of the American Ceramic Society; (United States)
OSTI ID:7165592
;  [1]
  1. Oak Ridge National Lab., TN (United States)

Samples of Si[sub 3]N[sub 4] made by chemical vapor deposition (CVD) and hot isostatic pressing (HIP) were exposed for 10 h at 1,400C to H[sub 2]-H[sub 2]O and Ar-O[sub 2] environments. Variations in weight and surface morphology of the CVD-Si[sub 3]N[sub 4] samples were monitored to determine the corrosion behavior of pure' Si[sub 3]N[sub 4] as baseline information. Additionally, the room-temperature flexural strengths of the HIP-Si[sub 3]N[sub 4] were determined and correlated with observed changes in weight and microstructure. The corrosion behavior of both materials depended on the level of oxidant (H[sub 2]O or O[sub 2]) in the atmosphere, but the magnitudes of the weight changes observed in the HIP-Si[sub 3]N[sub 4] were significantly greater. When the P[sub H[sub 2]O] in the H[sub 2] atmospheres was low (P[sub H[sub 2]O] < 2 [times] 10[sup [minus]5] MPa), significant weight loss and surface degradation occurred in both ceramics, accompanied by reductions in strength of the HIP-Si[sub 3]N[sub 4]. However, in atmospheres with P[sub H[sub 2]O] [ge] 1 [times] 10[sup [minus]4] MPa, the weight was greater than that of the as-received material. Somewhat different behavior was observed in samples exposed to Ar-O[sub 2] environments. Weight loss of both silicon nitrides increased with increasing P[sub O[sub 2]] until a level of about 2 [times] 10[sup [minus]5] MPa was reached. However, contrary to the results for H[sub 2]-H[sub 2]O exposures, even under these conditions the strength of the HIP-Si[sub 3]N[sub 4] material was found to have increased above that of the as-received material.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
7165592
Journal Information:
Journal of the American Ceramic Society; (United States), Vol. 73:10; ISSN 0002-7820
Country of Publication:
United States
Language:
English