In situ Raman spectroscopy of diamond during growth in a hot filament reactor
- Sandia National Laboratories, Livermore, California 94551-0969 (United States)
We report a system capable of obtaining Raman spectra during growth of carbon films in a hot filament reactor. A gated, multichannel detection system was used to discriminate against the high levels of background radiation produced by the hot substrate and the hot filament. The ability to detect and distinguish between diamond and nondiamond carbon films during growth is shown. Diamond was grown on silicon substrates at 925 {degree}C, with a filament temperature of 2100 {degree}C and with CH{sub 4}/H{sub 2} ratios between 0.002 and 0.008. A nondiamond carbon film was produced with CH{sub 4}/H{sub 2} ratio of 0.016. In order to estimate the sensitivity of the system to detect diamond during growth, the average particle size and fractional coverage of the substrate were determined when a diamond Raman signature was first observed. Currently, the system is capable of detecting diamond particles about 0.5 {mu}m in diameter covering about 3/4 of the surface.
- OSTI ID:
- 7164540
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 72:5; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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