Ce 4f orbital coupling to transition-metal band structure: An ion-implantation study

Journal Article · Fri Jul 15 04:00:00 EDT 1988 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.38.1508· OSTI ID:7161697

Lu, F; Stoffel, N; Neifeld, R A; Gunapala, S; Croft, M; den Boer, M L

Using ion implantation, we have prepared atomically dispersed alloys of Ce in almost all of the 3d, 4d, and 5d transition metals. We have measured the response of the implanted Ce 4f orbital to its host transition-metal environment via the Ce L/sub 3/ valence-state determination method. The close correspondence between the Ce 4f orbital occupancy and the host transition-metal d-band electronic structure that we observe motivates theoretical first-principles work on their coupling.

• Research Organization: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855-0849
• OSTI ID: 7161697
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 38:2; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ABSORPTION SPECTROSCOPY
ALLOYS
CERIUM ALLOYS
CERIUM IONS
CHARGED PARTICLES
COMPUTERIZED SIMULATION
DISPERSIONS
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ENERGY LEVELS
ENERGY RANGE
F STATES
ION IMPLANTATION
IONIZING RADIATIONS
IONS
KEV RANGE
KEV RANGE 100-1000
RADIATIONS
RARE EARTH ALLOYS
SIMULATION
SPECTROSCOPY
TRANSITION ELEMENT ALLOYS
X RADIATION