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Growth and properties of CdS/CdTe heterojunctions on soda lime glass substrates

Conference · · AIP Conference Proceedings (American Institute of Physics); (United States)
OSTI ID:7157492
; ; ;  [1]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Polycrystalline thin films of CdTe grown on glass/SnO[sub 2]/CdS substrates are studied using X-ray diffraction, atomic force microscopy, and time resolved photoluminescence decay techniques. CdS films were deposited by chemical solution. CdTe films were grown by close-spaced sublimation at substrate temperatures between 475--625 [degree]C. CdTe thin films deposited at temperatures higher than 525 [degree]C show preferential orientation in the [l angle]111[r angle] direction. The Grain size of the films increases with substrate temperature and the films are faceted for all the temperatures. The PL decay constant increases with substrate temperature up to 575 [degree]C for as-deposited films on soda-lime substrates. Films on borosilicate substrates show an increase up to the highest temperature used (625 [degree]C). There is systematic increase in the PL decay constant after CdCl[sub 2] heat treatment, and the range of values is 1--1.5 nsec for soda-lime samples and 1--2 nsec for borosilicate samples.
DOE Contract Number:
AC36-83CH10093
OSTI ID:
7157492
Report Number(s):
CONF-9310273--
Conference Information:
Journal Name: AIP Conference Proceedings (American Institute of Physics); (United States) Journal Volume: 306:1
Country of Publication:
United States
Language:
English