Proceedings of defect engineering in semiconductor growth, processing and device technology

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7155778

Ashok, S; Chevallier, J; Sumino, K; Weber, E

This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control.

• OSTI ID: 7155778
• Report Number(s): CONF-920402-; ISBN: 1-55899-157-3
• Resource Relation: Conference: 1992 Material Research Society (MRS) spring meeting, San Francisco, CA (United States), 27 Apr - 2 May 1992
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
74 ATOMIC AND MOLECULAR PHYSICS
CADMIUM TELLURIDES
CRYSTALLOGRAPHY
MEETINGS
DOPED MATERIALS
PROCESS CONTROL
SILICON
MONOCRYSTALS
POLYCRYSTALS
SCREW DISLOCATIONS
THIN FILMS
SPUTTERING
ARGON
ELECTRON BEAMS
GETTERING
ION BEAMS
ION IMPLANTATION
KRYPTON
SEMICONDUCTOR MATERIALS
BEAMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CONTROL
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DISLOCATIONS
ELEMENTS
FILMS
FLUIDS
GASES
LEPTON BEAMS
LINE DEFECTS
MATERIALS
NONMETALS
PARTICLE BEAMS
RARE GASES
SEMIMETALS
TELLURIDES
TELLURIUM COMPOUNDS
665300* - Interactions Between Beams & Condensed Matter- (1992-)
360602 - Other Materials- Structure & Phase Studies
360606 - Other Materials- Physical Properties- (1992-)
664200 - Spectra of Atoms & Molecules & their Interactions with Photons- (1992-)