Effects of field fluctuation on impact ionization rates in semiconductor devices due to the discreteness and distribution of dopants

Journal Article · Sun Feb 15 00:00:00 EST 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.338076· OSTI ID:7152490

Arnold, D; Kim, K; Hess, K

Field fluctuations due to dopants in a p/sup +/-n junction have been calculated and used to study the effects on the impact ionization rate with a Monte Carlo simulation. Results are plotted along the direction normal to the interface. We report that the field fluctuations have no effect on the ionization rate in the dead space and a small and spatially delayed effect in the region after the dead space even though the field shows large and rapid fluctuations. A similar ''averaged-out'' effect is also shown for the average electron energy. The enhancement in the ionization rate due to the field fluctuations which Shockley expected in his pioneering research is shown to be negligibly small.

• Research Organization: Department of Electrical and Computer Engineering and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 7152490
• Journal Information: J. Appl. Phys.; (United States), Vol. 61:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
P-N JUNCTIONS
PHYSICAL RADIATION EFFECTS
COMPUTERIZED SIMULATION
CRYSTAL DOPING
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRON COLLISIONS
FLUCTUATIONS
IONIZATION
MONTE CARLO METHOD
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
COLLISIONS
JUNCTIONS
MATERIALS
RADIATION EFFECTS
SIMULATION
VARIATIONS
360605* - Materials- Radiation Effects