Dynamic detuning in actively mode-locked semiconductor lasers
- Dept. of Electrical and Computer Engineering, Univ. of California, Santa Barbara, CA (US)
This paper describes a new limit on the achievable pulse-width from actively mode-locked semiconductor lasers which is due to dynamic detuning. Dynamic detuning sets a higher limit on pulsewidth than the effects of finite gain bandwidth and dispersion, agreeing with experimental results which show pulsewidths much longer than expected if dynamic detuning is neglected. The dynamic detuning mechanism gives rise to the multiple pulse output seen for all measurements of subpicosecond pulses, and can lead to an unstable output waveform if a perfect antireflection coating is used. The analysis uses the traveling-wave rate equations to include a spatial variation in carrier and photon densities along the laser cavity, and also includes the nonzero reflectivity of the antireflection-coated facet. The effects of phase at the antireflection-coated facet and dynamic carrier heating are included in the model.
- OSTI ID:
- 7149755
- Journal Information:
- IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Journal Name: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA) Vol. 25:12; ISSN 0018-9197; ISSN IEJQA
- Country of Publication:
- United States
- Language:
- English
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