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Title: High-density ion-implanted contiguous-disk-bubble technology. Annual Scientific Report No. 1, 30 September 1986-29 September 1987

Technical Report ·
OSTI ID:7146686

During the past year the authors advanced the state-of-the-art in several areas of magnetic-bubble technology. The main thrust of their research was to advance ion-implanted contiguous disk devices because these devices offer order-of-magnitude higher bit density than presently manufactured bubble devices. Noteworthy accomplishments include demonstration of bubble propagation in devices having 4 sq micrometer bit cells and exhibiting operating margins equal to those of today's manufactured devices. These devices were demonstrated to operate from 0 to 120 C, the limits of the testing capabilities. A major factor in this success was development of new epitaxial garnet materials that exhibited isotropic magnetostrictive properties -- a feature previously not obtained. In addition to the work on bubble propagation, significant progress was made on demonstrating a fully operational contiguous-disk chip, complete with bubble generators, transfer gates and stretcher/detectors. All components have been demonstrated to operate with good overlapping margins, and a complete chip was designed and fabricated.

Research Organization:
Carnegie-Mellon Univ., Pittsburgh, PA (USA). Dept. of Electrical and Computer Engineering
OSTI ID:
7146686
Report Number(s):
AD-A-190169/3/XAB
Country of Publication:
United States
Language:
English