Hydrogen dissolution in and release from nonmetals. II. Crystalline silicon

Journal Article · Sun Apr 01 04:00:00 EDT 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345365· OSTI ID:7142048

Abrefah, J; Olander, D R; Balooch, M ^[1]

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1. Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, Berkeley, CA (USA) Department of Nuclear Engineering, University of California, Berkeley, California 94720 (USA)

The solubility of hydrogen in crystalline silicon from 1363--1473 K and from 1.7--9.2 atm has been measured using the method of high-temperature, high-pressure infusion followed by high-temperature vacuum outgassing with mass-spectrometric detection. The measured solubilities were in the range 1--5{times}10{sup 16} atoms/cm{sup 3} and exhibited a temperature dependence consistent with a heat of solution of 30--40 kcal/mole. The pressure dependence of the solubility was consistently smaller than the square-root dependence characteristic of simple interstitial solution. The release-rate curves showed multiple peaks, which are incompatible with the classical diffusion model of release. Instead the peaks correspond to trapping of hydrogen at distinct binding sites in the silicon lattice. The release kinetics were modeled as detrapping processes.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7142048
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 67:7; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CRYSTALS
DIFFUSION
ELEMENTS
ENTHALPY
HYDROGEN
INFUSION
INTAKE
MASS SPECTROSCOPY
MEDIUM PRESSURE
NONMETALS
PHYSICAL PROPERTIES
PRESSURE DEPENDENCE
SEMIMETALS
SILICON
SOLUBILITY
SOLUTION HEAT
SOLVENT PROPERTIES
SPECTROSCOPY
THERMODYNAMIC PROPERTIES
TRAPPING
VERY HIGH TEMPERATURE