Possible negative- U properties of the cation vacancy in HgCdTe

Journal Article · Thu Mar 01 04:00:00 EST 1990 · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)

DOI:https://doi.org/10.1116/1.576970· OSTI ID:7141963

Cooper, D E ^[1]; Harrison, W A ^[2]

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1. Rockwell International, Thousand Oaks, California 91358 (US)
2. Stanford University, Stanford, California 94305 (USA)

The cation vacancy in HgCdTe is commonly used for {ital p}-type doping, but the energy levels of the vacancy acceptor are not known. We propose that the vacancy is a negative-{ital U} center, with inverted energy levels. Comparison with the vacancy in silicon,which is a well-characterized negative-{ital U} defect, indicates that the HgCdTe vacancy is likely to be a negative-{ital U} center also. The minority carrier recombination rate involving gap levels of the vacancy will show a quadratic dependence on the vacancy concentration, and the deep levels of a negative-{ital U} vacancy may be particularly suitable as recombination centers due to their location near the middle of the gap.

• OSTI ID: 7141963
• Journal Information: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 8:2; ISSN JVTAD; ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CADMIUM COMPOUNDS
CARRIERS
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
MATERIALS
MERCURY COMPOUNDS
POINT DEFECTS
SEMICONDUCTOR MATERIALS
TELLURIUM COMPOUNDS
TEMPERATURE DEPENDENCE
U CENTERS
VACANCIES