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U.S. Department of Energy
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Epitaxial silicon semiconductor detectors, past developments, future prospects

Conference ·
A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.
Research Organization:
Los Alamos Scientific Lab., N.Mex. (USA)
DOE Contract Number:
W-7405-ENG-36
OSTI ID:
7139808
Report Number(s):
LA-UR-76-2284; CONF-761006-8
Country of Publication:
United States
Language:
English