Epitaxial silicon semiconductor detectors, past developments, future prospects
A review of the main physical characteristics of epitaxial silicon as it relates to detector development is presented. As examples of applications results are presented on (1) epitaxial silicon avalanche diodes (ESAD); signal-to-noise, non-linear aspects of the avalanche gain mechanism, gain-bandwidth product, (2) ultrathin epitaxial silicon surface barrier (ESSB) detectors, response to heavy ions, (3) an all-epitaxial silicon diode (ESD), response to heavy ions, charge transport and charge defect. Future prospects of epitaxial silicon as it relates to new detector designs are summarized.
- Research Organization:
- Los Alamos Scientific Lab., N.Mex. (USA)
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 7139808
- Report Number(s):
- LA-UR-76-2284; CONF-761006-8
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE TRANSPORT
CHARGED PARTICLE DETECTION
ELEMENTS
EPITAXY
FABRICATION
GAIN
ION DETECTION
MEASURING INSTRUMENTS
PERFORMANCE
RADIATION DETECTION
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SENSITIVITY
SI SEMICONDUCTOR DETECTORS
SILICON
SURFACE BARRIER DETECTORS
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CHARGE TRANSPORT
CHARGED PARTICLE DETECTION
ELEMENTS
EPITAXY
FABRICATION
GAIN
ION DETECTION
MEASURING INSTRUMENTS
PERFORMANCE
RADIATION DETECTION
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMIMETALS
SENSITIVITY
SI SEMICONDUCTOR DETECTORS
SILICON
SURFACE BARRIER DETECTORS