skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Sputter-deposition and characterization of molybdenum disulfide thin films

Technical Report ·
OSTI ID:7139704

MoS[sub x] films were deposited on Si substrates by rf planar magnetron sputtering of hot-pressed MoS[sub 2] in Ar or H[sub 2]S/Ar and of Mo in H[sub 2]S/Ar. Results indicated that MoS[sub x] film properties can be controlled more easily by sputtering Mo in H[sub 2]S/Ar. The surface-sensitive technique of IRRAS (infrared reflection-absorption spectroscopy) was used to study CO adsorption on MoS[sub x] thin films sputter-deposited on Si, Au/Si and Pt/Si substrates. The spectra suggested mainly gas phase CO with multiple absorption bands about the 2162 and 2114 cm[sup [minus]1] regions for CO pressures over 30 torr; no CO bands were observed for monolayer coverages. Progress was made in sputter-depositing MoS[sub x]/metal/Si thin films with preferred orientation.

Research Organization:
Ames Lab., IA (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
W-7405-ENG-82
OSTI ID:
7139704
Report Number(s):
IS-T-1597; ON: DE93004801
Resource Relation:
Other Information: Thesis (M.S.)
Country of Publication:
United States
Language:
English