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Title: Covalent nitrides for maskless laser writing of microscopic metal lines

Conference ·
OSTI ID:7138299

Selected covalent metal nitrides with limited thermal stability, such as Sn[sub 3]N[sub 4], Cu[sub 3]N, and Ni[sub 3]N, were prepared in a glow discharge system by reactive sputtering in a nitrogen plasma. These compounds were characterized by chemical analysis and their thermal behavior established by temperature-programmed thermal decomposition. These materials decompose into the elements with the rate reaching a maximum at 615, 465, and 405[degrees]C for Sn, Cu, and Ni respectively. The feasibility of using these coatings to generate metal lines by maskless laser writing was explored. Conducting metal lines, a few micron in width, could be generated with each of these nitrides. The resistivities of the metal lines were within an order of magnitude of those of the bulk metals for Cu and Ni and somewhat more for Sn.

Research Organization:
Oak Ridge National Lab., TN (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC05-84OR21400
OSTI ID:
7138299
Report Number(s):
CONF-921101-11; ON: DE93004105
Resource Relation:
Conference: Material Research Society fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
Country of Publication:
United States
Language:
English