Structure and properties of boron nitride films grown by high temperature reactive plasma deposition

Journal Article · Mon Nov 01 04:00:00 EST 1976 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2132677· OSTI ID:7125105

Hyder, S B; Yep, T O

Thin films of boron nitride were grown by reactive plasma deposition using the ammonia--diborane reaction. The crystalline growth on substrates of silicon, compression-annealed pyrolytic graphite, and compression-annealed pyrolytic BN was investigated by electron microscopy, and composition of the deposited material was determined by electron microprobe analysis. The effect of gas ratio and substrate temperature on growth rate was also investigated. Some crystalline order was observed; the largest single-crystal BN grains were obtained on compression-annealed pyrolytic graphite. Resistivities of the order of 2 x 10/sup 9/ ..cap omega..-cm were measured with dielectric constant varying from 2.7 to 7.7 for growth with different gas ratios. Efforts to determine the drift velocity of carriers in thin films of BN were not successful. (8 figures)

• Research Organization: Varian Associates, Palo Alto, CA
• OSTI ID: 7125105
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 123:11; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
AMMONIA
BORANES
BORON COMPOUNDS
BORON NITRIDES
CARBON
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
COHERENT SCATTERING
CRYSTAL GROWTH
DEPOSITION
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DIFFRACTION
ELEMENTS
FILMS
GRAPHITE
HYDRIDES
HYDROGEN COMPOUNDS
INFRARED SPECTRA
NITRIDES
NITROGEN COMPOUNDS
NITROGEN HYDRIDES
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
SPECTRA
SUBSTRATES
VERY HIGH TEMPERATURE