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Growth reproducibility and temperature dependencies of the static properties of YSmLuCaFeGe garnet

Conference · · AIP (Am. Inst. Phys.) Conf. Proc.; (United States)
OSTI ID:7125089
Over 300 garnet films of nominal composition (Y/sub 1/./sub 5/Sm/sub 0/./sub 3/Lu/sub 0/./sub 3/Ca/sub 0/./sub 9/)(Fe/sub 4/./sub 1/Ge/sub 0/./sub 9/)O/sub 12/ were prepared for 5 ..mu..m bubble device operation at 0.5 MHz from -25 to 75/sup 0/C. Melt composition, run-to-run process control, as well as temperature and composition differentials required for reproducible growth are presented. The effects of charge imbalance and mobility changes on domain coercivity are discussed. The static bubble properties were measured from -30 to 100/sup 0/C, and temperature coefficients of -0.2 percent//sup 0/C and -0.1 percent//sup 0/C were found for the bubble collapse field and material length, respectively. With domain wall coercivity as low as 0.1 Oe at 25/sup 0/C and 0.4 Oe at -25/sup 0/C and with q > 4 at 75/sup 0/C, this material should be well suited for devices requiring moderate speed of operation over broad ranges of temperature.
Research Organization:
Texas Instruments Inc., Dallas
OSTI ID:
7125089
Conference Information:
Journal Name: AIP (Am. Inst. Phys.) Conf. Proc.; (United States) Journal Volume: 34
Country of Publication:
United States
Language:
English