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Mechanisms limiting performance in polycrystalline silicon solar cells

Conference ·
OSTI ID:7124341

Performance-limiting mechanisms in polycrystalline silicon were investigated by fabricating a matrix of 4cm/sup 2/ solar cells of various thicknesses from 10cm x 10cm polycrystalline silicon wafers of several bulk resistivities. The analysis of the results of this matrix indicates that bulk recombination is the dominant factor limiting the short-circuit current in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon, the same mechanism that limits the short-circuit current in single-crystal silicon. The average open-circuit voltage of the polycrystalline cells is 30 to 70 mV lower than that of the single-crystal (control) cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor have substantial scatter which is not related to thickness or resistivity. This implies that these parameters are sensitive to an additional mechanism which is probably spatial in nature since the cell position on the wafer was not controlled.

Research Organization:
Solarex Corp., Rockville, MD (USA); Jet Propulsion Lab., Pasadena, CA (USA)
DOE Contract Number:
NAS-7-100-955902
OSTI ID:
7124341
Report Number(s):
CONF-830508-29; ON: DE84011687
Country of Publication:
United States
Language:
English