Determination of effective surface recombination velocity and minority carrier lifetime in high efficiency Si solar cells (in Russian)
Theoretical analysis and development of a technique were made in order to guarantee measurement of the lifetime of minority charge carriers /tau/ in the base of the mass w and velocity of recombination on the rear surface of the solar cell S in those cases where the diffusion length of the minority carriers of the charge Lgreater than or equal tow. Measurements consists of finding time constants for drop in the photoelectromotive force /tau/v and shortcircuiting current /tau/j with subsequent calculation of /tau/ and S using a computer. The dependence of s on /tau/v and /tau/j is expressed in the form of 1/ j-1/ v = F9S), where F(S) is a transcendental function which is not sensitive to the change in S in the intervals: S<5 x 10/sup 2/ and S>5 x 10/sup 3/ cm/sec. Measurements of the solar cell with specific resistance /rho/ 0.3, 1 and 10 Ohm x cm indicate a rise in /tau/ with increase in /rho/. This agrees qualitatively with the previously published data. After removal of the rear isotype n-n/sup +/-barrier by polishing, S rises from 280 to 4200 cm/sec. In order to verify the reliability and to clarify the area of application of the proposed technique, measurements are made of FP with structure p/sup +/-n-n/sup +/ exposed to subsequent ..gamma..-radiation in doses up to 10/sup 6/ rad. The values of /tau/ which are calculated according to the drop in photoelectromotive force and the shortcircuiting current diminish with radiation from 68 to 1.8 sec. The dose relationship of the coefficient of damage of K is subordinate to the equation 1//tau/ = 1//tau/ /SUB O/ + KF, where F is the radiation dose. The value K equal to 0.5 + and or - 0.1 sec/sup -1/ x rad/sup -1/ agrees with the published data. Parallel calculations of /tau/ according to spectral relationships of photosensitivity of the solar cell result in the corresponding values changing from 15.9 to 0.6 sec. Measurement on the proposed technique of S with an increase in dose to 10/sup 5/ rad rises from 888 to 1762 cm/sec.
- OSTI ID:
- 7124310
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 54:1
- Country of Publication:
- United States
- Language:
- Russian
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Related Subjects
CHARGE CARRIERS
RECOMBINATION
SILICON SOLAR CELLS
CARRIER LIFETIME
COMPUTER CALCULATIONS
DIFFUSION LENGTH
DOSIMETRY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL FAULTS
ELECTROMOTIVE FORCE
P-N JUNCTIONS
PHOTOSENSITIVITY
POLISHING
RADIATION EFFECTS
RELIABILITY
VELOCITY
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EQUIPMENT
JUNCTIONS
LENGTH
LIFETIME
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SENSITIVITY
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE FINISHING
140501* - Solar Energy Conversion- Photovoltaic Conversion