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U.S. Department of Energy
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Spin-orbit interaction effects in zincblende semiconductors: Ab initio pseudopotential calculations

Conference ·
OSTI ID:7123984
Ab initio band structure calculations have been performed for the spin-orbit interaction effects at the top of the valence bands for GaAs and InSb. Relativistic, norm-conserving pseudopotentials are used with no correction made for the gaps from the local density approximation. The spin-orbit splitting at GAMMA and linear terms in the /rvec char/k dependence of the splitting are found to be in excellent agreement with existing experiments and previous theoretical results. The effective mass and the cubic splitting terms are also examined. 6 refs., 1 fig., 2 tabs.
Research Organization:
Lawrence Berkeley Lab., CA (USA); University of Science and Technology of China, Beijing
DOE Contract Number:
AC03-76SF00098
OSTI ID:
7123984
Report Number(s):
LBL-25543; CONF-880884-1; ON: DE88014663
Country of Publication:
United States
Language:
English