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Chemical vapor deposition and isotope separation

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2133229· OSTI ID:7121785
 [1];
  1. Philips Research Labs., Eindhoven, Netherlands
Because chemical vapor deposition (CVD) is based on diffusion, isotope separation should take place if the process is in the diffusion-limited range. The enrichment in a horizontal reactor as used for silicon epitaxy is calculated including thermal diffusion effects. It is found that whereas the deposition rate decreases exponentially along the reactor with characteristic length ..lambda.., the isotope enrichment decreases linearly over the length from maximum to zero at x = ..lambda... The maximum value depends in a complex way on the masses and concentrations of the gas to be separated and the second gas, present as a reaction component or carrier gas. The requirements for efficient CVD isotope enrichment, which include fast mixing, a high deposition rate, and high enrichment ratio can be satisfied better by a liquid-source CVD system. An experimental arrangement is described and discussed in terms of heat transfer by film boiling. Experiments with carbon deposition from C/sub 12/H/sub 26/ have shown a /sup 12/C//sup 13/C enrichment ratio up to0.8%, whereas ..delta..M/2M = 0.3%. This effect is attributable to mass and thermal diffusion, selective evaporation, spray fractionation by drops acting as microultracentrifuges, and geometry effects. The possibility of achieving uranium isotope separation with a CVD process has been considered theoretically. Thermodynamically possible reactions are specified by which liquid UF/sub 6/ is transformed into solid UF/sub 3/, UF/sub 4/, and UF/sub 5/. In principle CVD can also be used as a collector mechanism with laser-induced isotope enrichment.
OSTI ID:
7121785
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 124:1; ISSN JESOA
Country of Publication:
United States
Language:
English