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Increased radiation resistance in lithium-counterdoped silicon solar cells

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94647· OSTI ID:7119861
Lithium-counterdoped n/sup +/p silicon solar cells are found to exhibit significantly increased radiation resistance to 1-MeV electron irradiation when compared to boron-doped n/sup +/p silicon solar cells. In addition to improved radiation resistance, considerable damage recovery by annealing is observed in the counterdoped cells at T< or =100 /sup 0/C. Deep level transient spectroscopy measurements are used to identify the defect whose removal results in the low-temperature anneal. It is suggested that the increased radiation resistance of the counterdoped cells is primarily due to interaction of the lithium with interstitial oxygen.
Research Organization:
National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135
OSTI ID:
7119861
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:11; ISSN APPLA
Country of Publication:
United States
Language:
English