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Study of the metallic impurity band in n type GaAs

Thesis/Dissertation ·
OSTI ID:7112358
Combined magneto-transport and far infrared spectroscopic measurements are used to probe the electronic states near the metal to insulator transition in n type GaAs. In transport measurements, the critical fields B[sub c] of the magnetic-field-induced metal-insulator-transition are determined. In far infrared transmission spectroscopy measurements, a feature corresponding to the donor 1s-2p transition is found to persist of the metallic side of metal insulator transition and provides evidence of the existence of a metallic impurity band near the metal insulator transition. The Shubnikov-de Haas oscillations in low temperature magneto transport measurements and the temperature dependence of infrared transmission spectra are studied in order to understand the transport and optical properties of this metallic impurity band. The activation energy and enhanced effective mass of this metallic impurity band are obtained from both transport and optical experiments. The far infrared transmission spectroscopic studies of high T[sub c] superconductor films are also reported.
Research Organization:
Maryland Univ., College Park, MD (United States)
OSTI ID:
7112358
Country of Publication:
United States
Language:
English