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Surface and interface properties of superconducting YBa sub 2 Cu sub 3 O sub 7 minus x thin films on GaAs using yttrium stablized ZrO sub 2 /Si sub 3 N sub 4 as a buffer layer

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.578042· OSTI ID:7111136
; ; ; ;  [1]
  1. State University of New York at Buffalo, New York State Institute on Superconductivity, Department of Electrical and Computer Engineering, Bonner Hall, Amherst, New York 14260 (United States)

High temperature superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}x} (YBCO) thin films have been deposited onto III--V semiconductor GaAs substrates. The deposition temperature of the YBCO layer could be increased to as high as 650 {degree}C without apparently degrading the GaAs substrate due to the use of Si{sub 3}N{sub 4} as a subbottom buffer on the GaAs surface. The growth of highly {ital c}-axis oriented YBCO films on GaAs was enhanced by using yttrium stabilized ZrO{sub 2} (YSZ) as a subtop buffer between YBCO and Si{sub 3}N{sub 4}. Surface and cross-sectional scanning electron microscopy revealed excellent surface and interface properties. The good interfaces were further confirmed using Auger electron spectroscopy depth profiling of the samples. The preservation of the GaAs surface due to the use of a dual buffer layer of YSZ/Si{sub 3}N{sub 4} after YBCO deposition was demonstrated by photoreflectance measurement on the GaAs surface after removing YBCO, YSZ, and Si{sub 3}N{sub 4} layers.

OSTI ID:
7111136
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 10:4; ISSN JVTAD; ISSN 0734-2101
Country of Publication:
United States
Language:
English

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