Molecular-beam epitaxial growth and surface diffusion

Journal Article · Mon Jul 06 00:00:00 EDT 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.69.100· OSTI ID:7107038

Kessler, D A; Levine, H; Sander, L M ^[1]

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1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1120 (United States) Department of Physics and Institute for Nonlinear Science, University of California, San Diego, La Jolla, California 92093 (United States)

We investigate the statistical properties of the surface of thin films grown by molecular-beam epitaxy (MBE). We present and analyze a simple model of MBE growth which incorporates surface diffusion and deposition in a physically correct manner. The short-time behavior does not correspond to that predicted by the continuum model of Villain, Das Sarma, and others. At long times, the model is governed by Kardar-Parisi-Zhang dynamics.

• DOE Contract Number: FG03-92ER54189
• OSTI ID: 7107038
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 69:1; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

661100* -- Classical & Quantum Mechanics-- (1992-)
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
COMPUTERIZED SIMULATION
CRYSTAL STRUCTURE
DIFFUSION
DYNAMICS
EPITAXY
MATHEMATICS
MECHANICS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NUMERICAL ANALYSIS
ROUGHNESS
SCALING LAWS
SIMULATION
STATISTICAL MECHANICS
SURFACE PROPERTIES