A mixed method for the mixed initial boundary value problems of equations of semiconductor devices

Journal Article · Wed Jun 01 00:00:00 EDT 1994 · SIAM Journal on Numerical Analysis (Society for Industrial and Applied Mathematics); (United States)

DOI:https://doi.org/10.1137/0731039· OSTI ID:7106761

Zhu, J; Wu, H; Wang, Y ^[1]

---

1. Southeast Univ., Nanjing (China). Dept. of Mathematics and Mechanics

In this article, the approximation of nonstationary equations of the semiconductor device with mixed boundary conditions is considered. The approximate procedure of this system using a Galerkin method that makes use of a mixed finite element method for the potential equation combined with finite element method for the concentration equations is presented. Due to the poor regularity properties of the solutions to the semiconductor equations caused by mixed boundary conditions, a nonstandard analysis for the semidiscrete Galerkin procedure is used. Existence and uniqueness of the approximate solution is proved. A convergence analysis is also given for the method.

• OSTI ID: 7106761
• Journal Information: SIAM Journal on Numerical Analysis (Society for Industrial and Applied Mathematics); (United States), Vol. 31:3; ISSN 0036-1429
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
99 GENERAL AND MISCELLANEOUS//MATHEMATICS, COMPUTING, AND INFORMATION SCIENCE
BOUNDARY-VALUE PROBLEMS
GALERKIN-PETROV METHOD
SEMICONDUCTOR DEVICES
MATHEMATICAL MODELS
CARRIER MOBILITY
CALCULATION METHODS
ITERATIVE METHODS
MOBILITY
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)
990200 - Mathematics & Computers