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Theory of non-linear index of refraction of compound semiconductors

Conference ·
OSTI ID:7094712
The non-linear index of refraction of a compound semiconductor is calculated below the fundamental absorption edge as a function of incident laser field intensity, frequency and basic material parameters such as band gap energy, effective electron mass, heavy hole mass, spin orbit splitting energy and lattice constant. No adjustable parameters are involved. Theoretical results are obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. Comparison of theory with experimental results for the ternary compound Hg/sub 1-x/Cd/sub x/Te and binary compound InSb is discussed.
Research Organization:
Boston Univ., MA (USA). Dept. of Physics
DOE Contract Number:
AC02-79ER10444
OSTI ID:
7094712
Report Number(s):
DOE/ER/10444-9; CONF-8404124-9; ON: DE84013660
Country of Publication:
United States
Language:
English