100 kV GHOST electron beam proximity correction on tungsten x-ray masks

Journal Article · Tue Nov 01 04:00:00 EST 1994 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

DOI:https://doi.org/10.1116/1.587535· OSTI ID:7094669

Gesley, M A ^[1]; McCord, M A ^[2]

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1. Etec Systems, Inc., Hayward, California 94545 (United States)
2. IBM Semiconductor Research and Development Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

100 kV electron beam exposures of tungsten x-ray masks have been made using GHOST proximity correction. 0.15 [mu]m lithography is possible on masks having a 0.3 [mu]m thick tungsten absorber. 0.25 [mu]m features are resolved on masks with a 0.6 [mu]m tungsten film thickness. The linewidth control ([plus minus]5%) and dose latitude (2.5 nm edge shift per 1% dose change) are as good or better than those obtained by dose modulation, and contrast is sufficiently high to permit dry etch pattern transfer into the tungsten absorber. The process latitude makes 100 kV GHOST exposures suitable for patterning 1 Gbit dynamic random access memories on 1m x-ray masks.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7094669
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States) Vol. 12:6; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
ENERGY RANGE
ETCHING
IONIZING RADIATIONS
KEV RANGE
KEV RANGE 10-100
LEPTON BEAMS
MASKING
MEMORY DEVICES
METALS
PARTICLE BEAMS
RADIATIONS
SURFACE FINISHING
TRANSITION ELEMENTS
TUNGSTEN
X RADIATION