Kinetics scheme for the XeF laser

Journal Article · Sat Jul 15 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90287· OSTI ID:7094430

Finn, T G; Palumbo, L J; Champagne, L F

A kinetics scheme is described for electron-beam excitation of the XeF laser in a neon diluent. Both Ne/sup +/ and Ne* channels contribute significantly to the formation of the upper laser level. In each chain an important Penning ionization process leads to the formation of Xe/sup +/, which is the major intermediary in forming the upper laser level. Xe/sup +//sub 2/ is found to be the dominant absorber of laser radiation. The effect of the weakly bound XeF ground state is discussed.

• Research Organization: Laser Physics Branch, Optical Sciences Division, Naval Research Laboratory, Washington, D.C. 20375
• OSTI ID: 7094430
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ABSORPTION
BEAMS
CHARGED PARTICLES
CHEMICAL REACTION KINETICS
EFFICIENCY
ELECTRON BEAMS
ELEMENTS
ENERGY ABSORPTION
ENERGY LEVELS
ENERGY-LEVEL TRANSITIONS
EXCITATION
EXCITED STATES
FLUORIDES
FLUORINE COMPOUNDS
GAS LASERS
GROUND STATES
HALIDES
HALOGEN COMPOUNDS
IONIZATION
IONS
KINETICS
LASERS
LEPTON BEAMS
NEON
NEON IONS
NONMETALS
PARTICLE BEAMS
PENNING EFFECT
PERFORMANCE
RARE GAS COMPOUNDS
RARE GASES
REACTION KINETICS
SIMULATION
XENON COMPOUNDS
XENON FLUORIDES
XENON IONS