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Growth of the optical conductivity in the Cu-O planes

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ; ; ; ; ;  [1];  [2]
  1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)
  2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (USA)
We have studied the development of the optical conductivity as electrons are added to the Cu-O planes in Pr{sub 2{minus}{ital x}}Ce{sub {ital x}}CuO{sub 4{minus}{delta}} by varying {ital x}(0{le}{ital x}{le}0.2). In the metallic phases, contributions to the optical conductivity below 3 eV arise from three sources: mobile carriers, mid-infrared excitations, and charge-transfer excitations. The mobile carrier spectral weight grows roughly linearly with {ital x}, while the mid-infrared band appears to evolve at low doping via a transfer of spectral weight from the charge-transfer band. Comparing these results with hole doping in La{sub 2{minus}{ital x}}Sr{sub {ital x}}CuO{sub 4{minus}{delta}} indicates an electron-hole symmetry that is not anticipated by standard charge-transfer insulator models.
OSTI ID:
7093692
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:16; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English