Enhanced negative ion formation in ultraviolet-laser irradiated silane: Implications for plasma deposition of amorphous silicon

Journal Article · Mon Nov 14 04:00:00 EST 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112642· OSTI ID:7093167

Pinnaduwage, L A; Martin, M Z; Christophorou, L G ^[1]

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1. Atomic, Molecular, and High Voltage Physics Group, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6122 (United States) Department of Physics, University of Tennessee, Knoxville, Tennessee 37996 (United States)

Observation of enhanced electron attachment to ArF-excimer-laser irradiated silane is reported. Evidence is presented that highly excited electronic states of silane or its photofragments are responsible for the observed enhanced electron attachment. Since such electronically excited states may be produced in silane plasmas (by direct electron impact or by excitation transfer via metastable states of rare gases that are commonly used in silane discharges), the possible significance of this electron attachment process for negative ion formation in silane plasmas is indicated.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 7093167
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:20; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
700350* -- Plasma Production
Heating
Current Drive
& Interactions-- (1992-)
AMORPHOUS STATE
CHARGE STATES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRIC DISCHARGES
ELECTRON ATTACHMENT
ELEMENTS
HIGH-FREQUENCY DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PLASMA DIAGNOSTICS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SURFACE COATING