Displacement damage in silicon irradiated with 6- to 10-MeV neutrons. Memorandum report

Technical Report · Thu Mar 31 23:00:00 EST 1977

OSTI ID:7091867

Youngblood, J E; Van Antwerp, W R; Tapphorn, R M

Some preliminary experimental and theoretical results on the energy dependence of neutron-induced displacement damage in silicon are presented. The reduction in carrier lifetime, as reflected in the change in forward voltage at a fixed injection level, has been measured in wide-base silicon diodes, for monoenergetic neutrons at selected energies between 5.6 and 9.8 MeV. Twenty-five measurements at 19 energies were made. To calculate the variations in damage with neutron energy, a computer program that could utilize all details of the best available neutron cross section data was prepared. This program accepts coefficients for a Legendre polynomial fit of a partial cross section, determines the silicon recoil energy at a particular angle, and calculates the Lindhard fraction of energy for displacement damage. The calculated results provide a direct indication of the effect of angular distributions and the sensitivity of damage calculations to various details of the input neutron cross sections. (Author)

• Research Organization: Ballistic Research Labs., Aberdeen Proving Ground, MD (USA)
• OSTI ID: 7091867
• Report Number(s): AD-A-039774; BRL-MR-2738
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANGULAR DISTRIBUTION
BARYONS
CARRIER LIFETIME
DISTRIBUTION
ELECTRIC POTENTIAL
ELEMENTARY PARTICLES
ELEMENTS
ENERGY DEPENDENCE
ENERGY RANGE
FAST NEUTRONS
FERMIONS
HADRONS
LIFETIME
MEV RANGE
MEV RANGE 01-10
NEUTRONS
NUCLEONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECOILS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON