Surface flashover threshold and switched fields of photoconductive semiconductor switches
We have shown that Si Photoconductive Semiconductor Switches (PCSS) can be used to switch high voltages (up to 123 kV), high fields (up to 82 kV/cm) and high currents (2.8 kA). The ability of the samples to withstand this type of high voltage, high current switching depends on the way in which the current penetrates the semiconductor. The appropriate use of water or contacts greatly improves the switching capability. We have also shown that the wafers can support large currents (4.0 kA for GaAs and 2.8 kA for Si) and large linear current densities (3.2 kA/cm for GaAs and 1.4 kA/cm for Si). For GaAs this linear current density corresponds to about 1 Ma/cm/sup 2/ given a penetration depth of about 10/sup /minus/3/ cm. 4 refs., 4 figs., 2 tabs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7084529
- Report Number(s):
- SAND-88-0729C; CONF-881084-1; ON: DE88011618
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
BREAKDOWN
CURRENT DENSITY
CURRENTS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FLASHOVER
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
PHOTOCONDUCTORS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR SWITCHES
SEMIMETALS
SILICON
SWITCHES