Origin of the uniaxial anisotropy in thin films of (YLaPB)/sub 3/(FeGa)/sub 5/O/sub 12/ and its variation along the growth direction

Journal Article · Sat Jan 01 00:00:00 EST 1977 · Mater. Res. Bull.; (United States)

DOI:https://doi.org/10.1016/0025-5408(77)90088-5· OSTI ID:7084454

Hoekstra, B; Robertson, J M; Stacey, W T

The uniaxial anisotropy of La,Ga:YIG films grown by liquid phase epitaxy has been measured using spin-wave resonance techniques. The results show that in films produced at growth temperatures above 840/sup 0/C on (111) Gd/sub 3/Ga/sub 5/O/sub 12/ substrates the uniaxial anisotropy is stress induced. At lower growth temperatures the Pb incorporation gives rise to a positive growth-induced anisotropy of 4 x 10/sup 4/ erg/cm/sup 3/ per Pb atom per formula unit. Around the growth temperature of 840/sup 0/C, where the Pb and La effects cancel, homogeneous films can be grown. Variations of anisotropy within the film thickness will be shown to be due to variations of local growth rates which in turn cause composition changes.

• Research Organization: Philips Research Labs., Eindhoven, Netherlands
• OSTI ID: 7084454
• Journal Information: Mater. Res. Bull.; (United States), Vol. 12:1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
YTTRIUM ALLOYS
EPITAXY
MAGNETIC PROPERTIES
LANTHANUM ADDITIONS
GALLIUM ADDITIONS
CRYSTAL GROWTH
FILMS
GARNETS
VERY HIGH TEMPERATURE
ALLOYS
GALLIUM ALLOYS
LANTHANUM ALLOYS
MINERALS
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
SILICATES
SILICON COMPOUNDS
360201* - Ceramics
Cermets
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360204 - Ceramics
Cermets
& Refractories- Physical Properties