Characterization of microvoids in device-quality hydrogenated amorphous silicon by small-angle x-ray scattering and infrared measurements

Journal Article · Fri Dec 15 00:00:00 EST 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.12024· OSTI ID:7072409

Mahan, A H ^[1]; Williamson, D L ^[2]; Nelson, B P; Crandall, R S ^[1]

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1. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401 (USA)
2. Physics Department, Colorado School of Mines, Golden, Colorado 80401 (USA)

The size, shape, and number density of microvoids in device-quality glow discharge deposited hydrogenated {ital a}-Si has been obtained by small-angle x-ray scattering (SAXS). By combining the SAXS results with infrared measurements, we deduce that the interior surfaces of these microvoids are largely unhydrogenated, containing at most 4--9 bonded H atoms. We suggest that these H atoms are the clustered H atoms previously detected by multiple-quantum NMR.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 7072409
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Vol. 40:17; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILANES
VOIDS
AMORPHOUS STATE
DENSITY
DETECTION
MICROSTRUCTURE
SHAPE
SIZE
SMALL ANGLE SCATTERING
X-RAY DIFFRACTION
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHYSICAL PROPERTIES
SCATTERING
SILICON COMPOUNDS
360602* - Other Materials- Structure & Phase Studies