Search for thermally generated monovacancies in silicon using monoenergetic positrons

Journal Article · Fri Dec 15 04:00:00 EST 1989 · Physical Review (Section) B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.40.12037· OSTI ID:7072358

Throwe, J; Leung, T C; Nielsen, B; Huomo, H; Lynn, K G ^[1]

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1. Brookhaven National Laboratory, Upton, New York 11973 (US)

Using a monoenergetic, variable-energy positron beam, measurements of Doppler broadening and positronium fraction for positron-annihilation radiation from high-resistivity silicon have been made up to the melting point. The measurements show no clear evidence of positron trapping into thermally generated monovacancies which Dannefaer, Mascher, and Kerr observed by measuring the lifetimes of positrons emitted by an {ital in} {ital situ} source. A lower limit of about 3.6 eV is placed on the formation enthalpy of a neutral monovacancy, subject to assumptions about positron-trapping rate, binding energy, and monovacancy formation entropy.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7072358
• Journal Information: Physical Review (Section) B: Condensed Matter; (USA), Journal Name: Physical Review (Section) B: Condensed Matter; (USA) Vol. 40:17; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANNIHILATION
ANTILEPTONS
ANTIMATTER
ANTIPARTICLES
BASIC INTERACTIONS
BINDING ENERGY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DOPPLER BROADENING
ELECTROMAGNETIC INTERACTIONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY
FERMIONS
INTERACTIONS
LEPTONS
LINE BROADENING
POINT DEFECTS
POSITRONIUM
POSITRONS
SEMIMETALS
SILICON
TRAPPING
VACANCIES