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Sensitivity of second harmonic generation to space charge effects at Si(111)/electrolyte and Si(111)/SiO[sub 2]/electrolyte interfaces

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States)
DOI:https://doi.org/10.1116/1.579080· OSTI ID:7072001
; ; ;  [1]
  1. Department of Chemistry, University of Oregon, Eugene, Oregon 97403 (United States)
The potential dependence in the surface second harmonic response from hydrogen terminated [ital n]-Si(111) and oxidized [ital n]-Si(111) surfaces has been examined in aqueous NH[sub 4]F and H[sub 2]SO[sub 4] solutions. The relative phase of the nonlinear response as measured by rotational anisotropy experiments is found to be highly sensitive to the presence of the oxide and the field applied across the Si(111)/oxide/electrolyte interface. These observations are attributed to field effects within the space--charge region of the semiconductor which vary with the presence and thickness of the insulating oxide layer on the Si(111) surface.
DOE Contract Number:
FG06-86ER45273
OSTI ID:
7072001
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (United States) Vol. 12:5; ISSN 0734-2101; ISSN JVTAD6
Country of Publication:
United States
Language:
English