Pulsed dye amplification and frequency doubling of single longitudinal mode semiconductor lasers

Journal Article · Wed Dec 01 04:00:00 EST 1993 · IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/3.259407· OSTI ID:7071893

Farkas, A M; Eden, J G ^[1]

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1. Univ. of Illinois, Urbana, IL (United States). Everitt Lab

A single longitudinal mode CW AlGaAs semiconductor laser (786 nm) has been pulse-amplified in a Nd:YAG-pumped dye systems by 80 dB, yielding 4 ns (FWHM), infrared pulses having energies of 1.2 mJ. These amplified pulses have then been frequency-doubled in a KDP crystal to yield 110 [mu]J of tunable ultraviolet radiation at 393 nm. The amplified diode laser linewidth at 786 nm is measured to be 118 MHz.

• OSTI ID: 7071893
• Journal Information: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Journal of Quantum Electronics (Institute of Electrical and Electronics Engineers); (United States) Vol. 29:12; ISSN 0018-9197; ISSN IEJQA7
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
AMPLIFICATION
DATA
ELECTROMAGNETIC PULSES
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
FREQUENCY MIXING
HARMONIC GENERATION
INFORMATION
INFRARED RADIATION
LASERS
LINE WIDTHS
NUMERICAL DATA
PULSES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS