Reaction of Ta thin film with single crystalline (001) [beta]-SiC

Journal Article · Mon Aug 15 04:00:00 EDT 1994 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.357629· OSTI ID:7070654

Chen, J S; Kolawa, E; Nicolet, M ^[1]; Ruiz, R P ^[2]; Baud, L; Jaussaud, C ^[3]; Madar, R ^[4]

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1. California Institute of Technology, Pasadena, California 91125 (United States)
2. Jet Propulsion Laboratory, Pasadena, California 91109 (United States)
3. LETI (CEA-Technologies avancees), DMEL-CENG, 85X, F-38041 Grenoble (France)
4. L. M. G. P.-ENSPG, BP 46, F-38402 Saint-Martin-d'Heres (France)

The reaction between a sputter-deposited Ta film (320 nm thick) and a single crystalline (001) [beta]-SiC substrate induced by vacuum annealing at temperatures of 600--1200 [degree]C for 1 h (30 min at 1100 [degree]C) is investigated by 3 MeV He[sup ++] backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 [degree]C or at lower temperatures. At 900 [degree]C, the main product phases are Ta[sub 2]C and carbon-stabilized Ta[sub 5]Si[sub 3]. A minor amount of unreacted Ta is also present. After annealing at 1000 [degree]C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of [beta]-SiC/TaC/carbon-stabilized Ta[sub 5]Si[sub 3]/[alpha]-Ta[sub 5]Si[sub 3]/Ta[sub 2]C. The diffusion path at 1000 [degree]C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 [degree]C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi[sub 2]. This final state is reached by annealing at 1200 [degree]C for 1 h. At that point, the reacted layer has a laterally very uneven structure and morphology.

• OSTI ID: 7070654
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 76:4; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALLOYS
ANNEALING
BACKSCATTERING
CARBIDES
CARBON COMPOUNDS
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
COHERENT SCATTERING
DIFFRACTION
DIFFUSION
ELEMENTS
FILMS
HEAT TREATMENTS
INTERFACES
MASS SPECTRA
METALS
PHASE STUDIES
SCATTERING
SILICON CARBIDES
SILICON COMPOUNDS
SPECTRA
TANTALUM
THIN FILMS
TRANSITION ELEMENTS
X-RAY DIFFRACTION