Measurement of vanadium impurity in oxygen-implanted silicon by isotope dilution and resonance ionization mass spectrometry

Journal Article · Thu Feb 01 00:00:00 EST 1990 · Analytical Chemistry (Washington); (USA)

DOI:https://doi.org/10.1021/ac00202a003· OSTI ID:7069988

Mayo, S; Fassett, J D; Kingston, H M; Walker, R J ^[1]

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1. National Institute of Standards and Technology, Gaithersburg, MD (USA)

The combined analytical capabilities of isotope dilution, laser-induced resonance ionization spectroscopy, and mass spectrometry, integrated in the resonance ionization mass spectrometry technique (RIMS), have been evaluated as a tool for quantitative elemental impurity analysis of SIMOX (separation by implanted oxygen), a new silicon-based material prepared by oxygen implants. The vanadium impurity content was measured in the top crystalline SIMOX film and the oxygen-synthesized buried oxide layer in commercial wafers, resulting in 0.14 {mu}g/g {plus minus} 20%, or 1.7 {times} 10{sup 15} atoms/cm{sup 3}. A similar analysis on the substrate bulk shows about 30 times lower vanadium impurity levels. The origin of this contamination may be linked to the oxygen implant, although no modeling for it is offered here. The sensitivity of RIMS to vanadium is in the pg/g range. The accuracy of results is limited by the uncertainty in the blank, in view of the low total vanadium content in the specimen.

• OSTI ID: 7069988
• Journal Information: Analytical Chemistry (Washington); (USA), Vol. 62:3; ISSN 0003-2700
• Country of Publication: United States
• Language: English

Related Subjects

37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
36 MATERIALS SCIENCE
SILICON COMPOUNDS
QUANTITATIVE CHEMICAL ANALYSIS
DATA ANALYSIS
EXPERIMENTAL DATA
ION IMPLANTATION
ISOTOPE DILUTION
MEASURING INSTRUMENTS
MEASURING METHODS
OXYGEN
RESONANCE IONIZATION MASS SPECTROSCOPY
SEMICONDUCTOR MATERIALS
VANADIUM
CHEMICAL ANALYSIS
DATA
ELEMENTS
INFORMATION
ISOTOPE APPLICATIONS
MASS SPECTROSCOPY
MATERIALS
METALS
NONMETALS
NUMERICAL DATA
SPECTROSCOPY
TRACER TECHNIQUES
TRANSITION ELEMENTS
400200* - Inorganic
Organic
& Physical Chemistry
360603 - Materials- Properties