Impact-parameter dependent stopping powers for axially channeled and semichanneled MeV He ions in GaAs:Er

Journal Article · Sun May 15 00:00:00 EDT 1994 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.49.14387· OSTI ID:7067902

Kido, Y; Ikeda, A; Yamamoto, Y ^[1]; Nakata, J ^[2]; Yamaguchi, H; Takahei, K ^[3]

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1. Department of Physics, Faculty of Science and Engineering, Ritsumeikan University, Noji-cho, Kusatsu-shi, Shiga-ken, 525 (Japan)
2. NTT LSI Laboratories, 3-1, Wakamiya, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 (Japan)
3. NTT Basic Research Laboratories, 3-1, Wakamiya, Morinosato, Atsugi-shi, Kanagawa-ken, 243-01 (Japan)

We have investigated the impact-parameter dependence of stopping powers for axially channeled and semichanneled MeV He ions in Er-sheet-doped GaAs epitaxial layers grown by molecular-beam epitaxy. Ion channeling analysis using 2.0 MeV He[sup +] coupled with the observation by transmission-electron microscope has revealed the formation of fine ErAs clusters, whose lattice constant shrinks and coincides exactly with that of the GaAs host. Thus the Er atoms take the position corresponding to the tetrahedral interstitial site of the GaAs lattice. The Er peak energies in the backscattering spectra strongly depend on the impact-parameter dependent stopping powers, in particular for the incidence along [110] and the directions slightly tilted from [110] and [100]. We divide the stopping power into two parts---contributions from outer electrons and from inner electrons of GaAs. The former is calculated from the dielectric response theory. For the latter, we consider four types of stopping powers dependent upon impact parameter; (1) Dettmann-Robinson theory, (2) the binary-encounter model, (3) the binary encounter combined with the local-density approximation, and (4) the extended-local-electron-density model. The Er peak energies observed are well reproduced employing model (3).

• OSTI ID: 7067902
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 49:20; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
GALLIUM ARSENIDES
ION CHANNELING
HELIUM IONS
STOPPING POWER
ERBIUM ADDITIONS
IMPACT PARAMETER
MEV RANGE
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CHANNELING
CHARGED PARTICLES
ENERGY RANGE
ERBIUM ALLOYS
GALLIUM COMPOUNDS
IONS
PNICTIDES
RARE EARTH ADDITIONS
RARE EARTH ALLOYS
665300* - Interactions Between Beams & Condensed Matter- (1992-)