Multiple-charged secondary-ion emission from silicon and silicon oxide bombarded by heavy ions at energies of 0. 4--10 MeV
- Department of Nuclear Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-01 (Japan)
Secondary-ion yields have been measured for Si and SiO[sub 2] targets bombarded by C, Si, Ge, and Ag projectiles over an energy range beween 0.4 and 10 MeV, where the atomic-collision process changes from a nuclear to an electronic one. Obtained yields of secondary Si[sup [ital q]+] ([ital q]=1,2,3,4) ions for the C projectiles are generally decreasing functions of incident energy. On the other hand, the yields for Ag increase with increasing energy except for Si[sup +]. The possibility of multiple-charged recoil-ion production through the simultaneous process of ionization and recoil caused by the projectiles is discussed on the basis of an independent-electron model, which describes multiple ionization of atoms by energetic heavy-ion impact.
- OSTI ID:
- 7061176
- Journal Information:
- Physical Review A; (United States), Journal Name: Physical Review A; (United States) Vol. 51:1; ISSN 1050-2947; ISSN PLRAAN
- Country of Publication:
- United States
- Language:
- English
Similar Records
Coincidence measurements of slow recoil ions with projectile ions in 42-MeV Ar sup q + -Ar collisions
Production of recoil Ne sup i + ions accompanied by electron loss and capture of 1. 05-MeV/amu Ne sup q + ( q =2, 4, 6, 8, and 10) ions
Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
ELEMENTS
EMISSION
ENERGY RANGE
HEAVY IONS
ION COLLISIONS
ION EMISSION
IONS
KEV RANGE
KEV RANGE 100-1000
MEV RANGE
MEV RANGE 01-10
MULTICHARGED IONS
OXIDES
OXYGEN COMPOUNDS
SECONDARY EMISSION
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SOLIDS