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Influence of the environment on the Coulomb blockade in submicrometer normal-metal tunnel junctions

Journal Article · · Physical Review, B: Condensed Matter; (United States)
; ;  [1]
  1. Department of Physics, University of California, Berkeley, Berkeley, California 94720 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)
Submicrometer normal-metal tunnel junctions were fabricated with thin-film leads of either about 2 k{Omega}/{mu}m or about 30 k{Omega}/{mu}m. The current-voltage ({ital I}-{ital V}) characteristics at millikelvin temperatures displayed a much sharper Coulomb blockade for the high-resistance leads than for the low-resistance leads. The zero-bias differential resistance increased as the temperature was lowered, flattening off at the lowest temperatures. A heuristic model based on the quantum Langevin equation is developed, which explains these effects qualitatively in terms of the Nyquist noise generated in the leads; in this model, the flattening of the zero-bias resistance arises from zero-point fluctuations. The data are also compared with a more accurate phase-correlation model that treats the junction and the circuit coupled to it as a single quantum circuit. This model accounts for the observed {ital I}-{ital V} characteristics quite accurately except near zero bias where it overestimates the dynamic resistance by roughly 50% at the lowest temperatures. This model, however, does not account for the flattening of the zero-bias resistance at the lowest temperatures. It is suggested that the addition of quantum fluctuations in the junction to the phase-correlation theory may account for this discrepancy.
DOE Contract Number:
AC03-76SF00098
OSTI ID:
7047100
Journal Information:
Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 45:6; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English