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Electronic structure of nickel silicides Ni/sub 2/Si, NiSi, and NiSi/sub 2/

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)
Synchrotron-radiation photoemission studies of bulk samples of Ni/sub 2/Si, NiSi, and NiSi/sub 2/ show valence-band emission dominated by Ni 3d-derived features. These d bands shift toward E/sub F/ and broaden with increasing Ni concentration and Ni-Ni interaction, falling at -3.2 eV for NiSi/sub 2/ and -1.3 eV for Ni/sub 2/Si. In each case, the density of states near E/sub F/ is very low. These results are interpreted in terms of recent calculations which are shown to forecast correctly the general trends and modifications of the silicide electronic structure. Further, they indicate that the d-band features observed in photoemission reflect d states which are not directly involved in the Ni--Si bonds. Core-level studies show that charge transfer plays a minor role in the chemical bond, but changes in the electronic configuration account for the observed shifts in the Ni 3p binding energy.
Research Organization:
Synchrotron Radiation Center, University of Wisconsin-Madison, Stoughton, Wisconsin 53589
OSTI ID:
7044830
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 26:2; ISSN PRBMD
Country of Publication:
United States
Language:
English